TC2623 - 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

United Monolithic Semiconductors

Datasheet Details

Part number: TC2623
Manufacturer: United Monolithic Semiconductors
File Size: 86.84 KB
Datasheet: TC2623-UnitedMonolithicSemiconductors.pdf
Description: 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor..

0.3dB minimum noise figure @ 5GHz.
0.65dB minimum noise figure @ 12GHz.
14dB associated gain @ 5GHz.
10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure Associated gain 13 Min 10 Typ 30 0.3 14 Max 60 0.55 Unit mA dB dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSTC26237003 Specifications sub.

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United Monolithic Semiconductors TC2623-like datasheet

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