TC2623
Description
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band. It is available in the BMH204 package and in chip form.
Main Features
- 0.3d B minimum noise figure @ 5GHz
- 0.65d B minimum noise figure @ 12GHz
- 14d B associated gain @ 5GHz
- 10.5d B associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source
Main Characteristics
Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure Associated gain 13 Min 10 Typ 30 0.3 14 Max 60 0.55 Unit m A d B d B
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSTC26237003
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128
- B.P.46
- 91401 Orsay Cedex France...
