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TC2623 - 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor

Description

The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor.

This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer.

It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band.

Features

  • 0.3dB minimum noise figure @ 5GHz.
  • 0.65dB minimum noise figure @ 12GHz.
  • 14dB associated gain @ 5GHz.
  • 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure Associated gain 13 Min 10 Typ 30 0.3 14 Max 60 0.55 Unit mA dB dB ESD Protections: Electrostatic discharge sensitive device observe handling precautions! Ref. : DSTC26237003 Specifications sub.

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Datasheet Details

Part number TC2623
Manufacturer United Monolithic Semiconductors
File Size 86.84 KB
Description 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
Datasheet download datasheet TC2623 Datasheet

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TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. It is mounted in a 70mils hermetic ceramicmetal package, easy to match at X band. It is available in the BMH204 package and in chip form. 4 2 1 3 Main Features § 0.3dB minimum noise figure @ 5GHz § 0.65dB minimum noise figure @ 12GHz § 14dB associated gain @ 5GHz § 10.5dB associated gain @ 12GHz 1 : Gate 2 : Source 3 : Drain 4 : Source Main Characteristics Tamb = +25°C Symbol Idss NFmin Ga Parameter Saturated drain current Minimum noise figure Associated gain 13 Min 10 Typ 30 0.3 14 Max 60 0.
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