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Vishay Intertechnology Electronic Components Datasheet

SIZ340DT Datasheet

Dual N-Channel 30V (D-S) MOSFET

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www.vishay.com
SiZ340DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) MAX.
0.0095 at VGS = 10 V
Channel-1 30
0.0137 at VGS = 4.5 V
0.0051 at VGS = 10 V
Channel-2 30
0.0070 at VGS = 4.5 V
ID (A)
30 a
22
40 a
40 a
Qg (Typ.)
5.6 nC
10.1 nC
FEATURES
• PowerPAIR® Optimizes high-side and
low-side MOSFETs for synchronous buck
converters
• TrenchFET® power Mosfets
• 100 % Rg and UIS tested
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PowerPAIR® 3 x 3 G2
S2 8
S2 7
S2 6
5 S1/D2
(Pin 9)
3 mm 1 3 mm
Top View
D1
1
4
3
2 G1
D1
D1
D1
Bottom View
Ordering Information:
SiZ340DT-T1-GE3 (lead (Pb)-free and halogen-free)
APPLICATIONS
• Synchronous buck
- Battery charging
- Computer system power
- Graphic cards
• POL
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 100 μs)
Continuous Source Drain Diode Current
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d,e
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
30
+20, -16
30 a 40 a
26.5
40 a
15.6 b,c
22.6 b,c
12.4 b,c
18.1 b,c
100 150
13.9 26
3.1 b,c
3.5 b,c
10 15
5 11
16.7 31
10.7 20
3.7 b,c
4.2 b,c
2.4 b,c
2.7 b,c
-55 to 150
260
V
A
mJ
W
°C
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
S14-0611-Rev. B, 24-Mar-14
1
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SIZ340DT Datasheet

Dual N-Channel 30V (D-S) MOSFET

No Preview Available !

www.vishay.com
SiZ340DT
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ. Max.
Maximum Junction-to-Ambient a,b
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
27 34
6 7.5
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2.
Channel-2
Typ. Max.
24 30
3.2 4
Unit
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA
VDS Temperature Coefficient
ΔVDS/TJ
ID = 250 μA
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = 250 μA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
Gate Source Leakage
IGSS
VDS =0 V, VGS = +20 V, -16 V
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V
IDSS
VDS = 30 V, VGS =0 V, TJ = 55 °C
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
Dynamica
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ID(on)
RDS(on)
gfs
Ciss
Coss
Crss
VDS 5 V,VGS = 10 V
VGS = 10 V, ID = 15.6 A
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 13 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 15.6 A
VDS = 15 V, ID = 20 A
Channel-1
VDS = 15 V, VGS = 0 V, f = 1 MHz
Channel-2
VDS =15 V, VGS = 0 V, f = 1 MHz
Crss / Ciss Ratio
Total Gate Charge
VDS = 15 V, VGS = 10 V, ID = 15.6 A
Qg VDS = 15 V, VGS = 10 V, ID = 20 A
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Qgs
Qgd
Qoss
Rg
Channel-1
VDS = 15 V,VGS = 4.5 V, ID = 15.6 A
Channel-2
VDS = 15 V,VGS = 4.5 V, ID = 20 A
f = 1 MHz
Min. Typ. Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
30 -
-
V
30 -
-
- 18.4 -
- 30 -
mV/°C
- -4.3 -
- -5 -
1 - 2.4
V
1 - 2.4
- - ± 100
nA
- - ± 100
- -1
- -1
μA
- -5
- -5
10 -
-
A
10 -
-
- 0.0079 0.0095
- 0.0042 0.0051 Ω
- 0.0110 0.0137
- 0.0058 0.0070
- 37 -
- 60 -
S
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
-
-
-
-
-
-
0.042
0.025
-
-
-
-
-
-
-
-
-
-
0.3
0.3
760
1552
250
450
32
40
-
-
12.3
22.6
5.6
10.1
2.3
4.2
1
1.8
6.6
12.4
1.7
1.3
-
-
-
-
-
-
0.084
0.050
19
35
9
16
-
-
-
-
-
-
3.4
2.6
pF
-
nC
Ω
S14-0611-Rev. B, 24-Mar-14
2
Document Number: 62877
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SIZ340DT
Description Dual N-Channel 30V (D-S) MOSFET
Maker Vishay
Total Page 14 Pages
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