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Vishay Intertechnology Electronic Components Datasheet

SIZ342DT Datasheet

Dual N-Channel 30V (D-S) MOSFET

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www.vishay.com
SiZ342DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
Channel-1
and
Channel-2
VDS (V)
30
RDS(on) (Ω) MAX.
0.0115 at VGS = 10 V
0.0153 at VGS = 4.5 V
ID (A)
30 a
27.5
Qg (Typ.)
4.5 nC
PowerPAIR® 3 x 3 G2
S2 8
S2 7
S2 6
5 S1/D2
(Pin 9)
3 mm 1 3 mm
Top View
D1
1
4
3
2 G1
D1
D1
D1
Bottom View
Ordering Information:
SiZ342DT-T1-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• PowerPAIR® optimizes high-side and low-side
MOSFETs for synchronous buck converters
• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Synchronous buck
- Battery charging
- Computer system power
- Graphic cards
• POL
D1
G1
N-Channel 1
MOSFET
S1/D2
G2
N-Channel 2
MOSFET
S2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
CHANNEL-1 AND CHANNEL-2
SYMBOL
LIMIT
Drain-Source Voltage
VDS 30
Gate-Source Voltage
TC = 25 °C
VGS
+20 / -16
30 a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
26.5
15.6 b, c
12.4 b, c
Pulsed Drain Current (t = 100 μs)
IDM 100
Continuous Source Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
13.9
3.1 b, c
Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
10
5
TC = 25 °C
16.7
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
10.7
3.7 b, c
2.4 b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d, e
TJ, Tstg
-55 to 150
260
UNIT
V
A
mJ
W
°C
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
S15-0031-Rev. B, 19-Jan-15
1
Document Number: 62949
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

SIZ342DT Datasheet

Dual N-Channel 30V (D-S) MOSFET

No Preview Available !

www.vishay.com
SiZ342DT
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, b
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 69 °C/W.
SYMBOL
RthJA
RthJC
CHANNEL-1 AND CHANNEL-2
TYP.
MAX.
27 34
6 7.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
CHANNEL-1 AND CHANNEL-2
TEST CONDITIONS
MIN.
TYP.
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
ID = 250 μA
ID = 250 μA
VDS = VGS, ID = 250 μA
VDS =0 V, VGS = +20 V/ -16 V
30 -
- 20
- -5.6
1.2 -
--
Zero Gate Voltage Drain Current
On-State Drain Current b
Drain-Source On-State Resistance b
Forward Transconductance b
Dynamic a
IDSS
ID(on)
RDS(on)
gfs
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V,VGS = 10 V
VGS = 10 V, ID = 14.4 A
VGS = 4.5 V, ID = 13 A
VDS = 15 V, ID = 14.4 A
--
--
10 -
- 0.0084
- 0.0111
- 37
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Crss / Ciss Ratio
Total Gate Charge
Ciss
Coss
Crss
Qg
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 14.4 A
-
-
-
0.03
-
-
650
236
20
-
10
4.5
Gate-Source Charge
Gate-Drain Charge
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
Qgd
Qoss
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 15 V,VGS = 4.5 V, ID = 14.4 A
f = 1 MHz
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 15 V, RL = 1.5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
-
-
-
0.3
-
-
-
-
-
-
-
-
2.1
0.7
6.6
1.4
15
50
16
10
8
15
17
7
MAX.
-
-
-
2.4
± 100
1
5
-
0.0115
0.0153
-
-
-
-
0.06
20
9
-
-
-
2.8
23
75
24
20
16
23
26
14
UNIT
V
mV/°C
V
nA
μA
A
Ω
S
pF
-
nC
Ω
ns
S15-0031-Rev. B, 19-Jan-15
2
Document Number: 62949
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number SIZ342DT
Description Dual N-Channel 30V (D-S) MOSFET
Maker Vishay
Total Page 10 Pages
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