SI4493DY - P-Channel MOSFET

Features

ID (A) - 14 rDS(on) (W) 0.00775 @ VGS = - 4.5 V D TrenchFETr Power MOSFET.

Vishay Siliconix

Datasheet Details

Part number	SI4493DY
Manufacturer	Vishay Siliconix
File Size	44.94 KB
Description	P-Channel MOSFET
Datasheet	SI4493DY Datasheet
Additional preview pages of the SI4493DY datasheet.

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Full PDF Text Transcription

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Si4493DY New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 0.01225 @ VGS = - 2.5 V - 11 FEATURES ID (A) - 14 rDS(on) (W) 0.00775 @ VGS = - 4.5 V D TrenchFETr Power MOSFET APPLICATIONS D Load Switch S SO-8 S S S G 1 2 3 4 Top View D Ordering Information: Si4493DY Si4493DY-T1 (with Tape and Reel) P-Channel MOSFET 8 7 6 5 D D D D G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID - 11 IDM IS - 2.7 3.0 1.9 - 55 to 150 - 50 - 1.36 1.5 0.

Published: Apr 8, 2005 |