* Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 TO-247AD (TO-3P)
V40100PG Datasheet (119.21 KB)
V40100PG
Vishay ↗ Siliconix
119.21 KB
Dual high-voltage trench mos barrier schottky rectifier.
V40100PG New Product Vishay General Semiconductor www.DataSheet4U.com Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 .
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