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V40100PG - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Features

  • Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE.

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Datasheet Details

Part number V40100PG
Manufacturer Vishay Siliconix
File Size 119.21 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
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Full PDF Text Transcription

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V40100PG New Product Vishay General Semiconductor www.DataSheet4U.com Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 V at IF = 5 A FEATURES • • • • • • Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection.
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