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V40100PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Description

www.vishay.com V40100PW Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.39 V at IF = 5 A TMBS.

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Datasheet Specifications

Part number
V40100PW
Manufacturer
Vishay ↗
File Size
252.26 KB
Datasheet
V40100PW-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-3PW PIN

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 100 V IFSM EAS at L = 100 mH 300 A 280 mJ VF at IF = 20 A 0.61 V TJ max. 150 °C Package TO-3PW

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