V40150C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V40150C-E3
Manufacturer	Vishay ↗
File Size	214.06 KB
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V40150C-E3-Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packag.

📁 V40150C-E3 Similar Datasheet

V40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PG - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V400DK1-KS1 - TFT LCD Module (INNOLUX)
V400H1-L01 - TFT LCD (Chi Mei)
V400H1-L02 - TFT LCD (CMI MEI)

Other Datasheets by Vishay

Published: Jun 9, 2019 |