Part number:
V40150C
Manufacturer:
Vishay ↗ Siliconix
File Size:
163.38 KB
Description:
Dual high-voltage trench mos barrier schottky rectifier.
V40150C Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: for definitions of compliance please
Datasheet Details
V40150C
Vishay ↗ Siliconix
163.38 KB
Dual high-voltage trench mos barrier schottky rectifier.
📁 Related Datasheet
V40150C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100K Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PG Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40150C Distributor