V40150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Description

www.vishay.com V40150C, VI40150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = .

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Datasheet Specifications

Part number: V40150C
Manufacturer: Vishay ↗ Siliconix
File Size: 163.38 KB
Datasheet: V40150C_VishaySiliconix.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: for definitions of compliance please

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 150 V 160 A 0.75 V 150 °C TO-220AB, TO-262AA Diode variation Dual common cat

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V40150C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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