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V40170C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40170C-M3 Description

www.vishay.com V40170C-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A TM.

V40170C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 V40170C 3 2

V40170C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Package 2 x 20 A 170 V 200 A 0.68 V 175 °C TO-220AB Diode variation Dual common cathode MECH

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Datasheet Details

Part number
V40170C-M3
Manufacturer
Vishay ↗
File Size
125.27 KB
Datasheet
V40170C-M3-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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