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V40100PG Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Description

V40100PG New Product Vishay General Semiconductor www.DataSheet4U.com Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.420 .
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Datasheet Specifications

Part number
V40100PG
Manufacturer
Vishay ↗ Siliconix
File Size
119.21 KB
Datasheet
V40100PG_VishaySiliconix.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 TO-247AD (TO-3P)

Applications

* For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD2

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