V40100PG Datasheet (Vishay Siliconix) - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40100PG, Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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V40100PG Features

* Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 TO-247AD (TO-3P)