V40100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Description

New Product V40100P www.DataSheet4U.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V .

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Datasheet Specifications

Part number: V40100P
Manufacturer: Vishay ↗ Siliconix
File Size: 124.73 KB
Datasheet: V40100P_VishaySiliconix.pdf
Description: Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* TMBS®
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 3 2 1
* Low thermal resistance
* Solder dip 260 °C, 40 s
* Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICAT

Applications

* For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. TO-247AD (TO-3P) PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 100 V 300 A 0.60 V 150 °C MECHANI

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V40100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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