V40120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	V40120C
Manufacturer	Vishay ↗
File Size	217.04 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	V40120C_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912 D2PAK (TO-263AB) K TO-262AA K 2 1 VB40120C PIN 1 K.

📁 V40120C Similar Datasheet

V40100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100G - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100P - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PG - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40150C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V400DK1-KS1 - TFT LCD Module (INNOLUX)
V400H1-L01 - TFT LCD (Chi Mei)
V400H1-L02 - TFT LCD (CMI MEI)

Other Datasheets by Vishay

Published: Feb 2, 2012 |