* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-3PW PIN
V40170PW-M3 Datasheet (83.69 KB)
V40170PW-M3
83.69 KB
Dual high-voltage trench mos barrier schottky rectifier.
www.vishay.com V40170PW-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A T.
📁 Related Datasheet
V40170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40170C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100G Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100K Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
V40100P Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PG Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
V40100PGW Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
Stock and price
 |
|
Toshiba America Electronic Components
|
| MG75Q1BS11 |
| 1108 In Stock |
|
Unit Price : $0
|
TAGS
Image Gallery
