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V40170PW Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V40170PW Description

V40170PW www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.52 V at IF = 5 A .

V40170PW Features

* Trench MOS Schottky technology Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS®
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definition

V40170PW Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 20 A 170 V 200 A 0.67 V 175 °C Case: TO-3PW Molding compound meets UL 94 V-0

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Datasheet Details

Part number
V40170PW
Manufacturer
Vishay ↗
File Size
143.46 KB
Datasheet
V40170PW_Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay V40170PW-like datasheet