Datasheet Details
| Part number | WFP5N60B |
|---|---|
| Manufacturer | Winsemi |
| File Size | 531.93 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet |
 WFP5N60B Datasheet
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General Description
This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topo
Key Features
- 4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V.
- Ultra-low Gate charge(Typical 15nC).
- Fast Switching Capability.
- 100%Avalanche Tested.
- Maximum Junction Temperature Range(150℃) WFP5N60B Silicon N-Channel MOSFET General.
