silicon n-channel mosfet.
*1A,600V, RDS(on)(Max 15.0Ω)@VGS=10V
* Ultra-low Gate Charge(Typical 6.1nC)
* Fast Switching Capability
* 100%Avalanche Tested
* Maximum Junction Temp.
Th is Power MO SFET is pro du ced using Winsemi ’s ad van ced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is speciall.
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