CMPA601C025F amplifier equivalent, power amplifier.
* 34 dB Small Signal Gain
*
*
40 W Typical PSAT Operation up to 28 V
* High Breakdown Voltage
* High Temperature Operation
* Size 0.172 x 0..
* Jamming Amplifiers
* Test Equipment Amplifiers
* Broadband Amplifiers
Rev 4.1
– April 202.
The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers .
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