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CMPA601C025F - Power Amplifier

General Description

The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process.

Key Features

  • 34 dB Small Signal Gain.
  • 40 W Typical PSAT Operation up to 28 V.
  • High Breakdown Voltage.
  • High Temperature Operation.
  • Size 0.172 x 0.239 x 0.004 inches.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMPA601C025F 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier Description The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and superior efficiency in a small footprint package at 50 ohms. PN: CMPA601C025F Package Type: 440213 Typical Performance Over 6.0-12.0 GHz (TC = 25˚C) Parameter Small Signal Gain POUT @ PIN = 22 dBm Power Gain @ PIN = 22 dBm PAE @ PIN = 22 dBm 6.0 GHz 35 34 23 21 7.