* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qualified for standard applications
* ESD protection
* RoHS, Pb-free, REACH-compliant
* Hi
GAN3R2-100CBE Datasheet (286.48 KB)
GAN3R2-100CBE
286.48 KB
Gan fet.
WLCSP8 GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) 27 April 2023 Product.
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