GAN3R2-100CBE datasheet, fet equivalent, nexperia

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GAN3R2-100CBE Features and benefits

* Enhancement mode - normally-off power switch
* Ultra high frequency switching capability
* No body diode
* Low gate charge, low output charge
* Qual.

GAN3R2-100CBE Application

* ESD protection
* RoHS, Pb-free, REACH-compliant
* High efficiency and high power density
* Wafer Level.

GAN3R2-100CBE Description

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance. 2. Features and benefits
* Enhancement mode -.

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