GAN3R2-100CBE
GAN3R2-100CBE is GaN FET manufactured by Nexperia.
description
The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (Ga N) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance.
2. Features and benefits
- Enhancement mode
- normally-off power switch
- Ultra high frequency switching capability
- No body diode
- Low gate charge, low output charge
- Qualified for standard applications
- ESD protection
- Ro HS, Pb-free, REACH-pliant
- High efficiency and high power density
- Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm
3. Applications
- High power density and high efficiency power conversion
- AC-to-DC converters, (secondary stage)
- High frequency DC-to-DC converters in 48 V systems
- Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers
- Data and tele (AC-to-DC and DC-to-DC) converters
- Motor drives
- Li DAR (non-automotive)
- Class D audio amplifiers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS VTDS drain-source voltage transient drain to source voltage pulsed; tp = 1 µs; δfactor = 0.01
ID drain current
VGS = 5 V
[1]
Ptot total power dissipation Fig. 1
Tj junction temperature
Static characteristics
RDSon drain-source on-state VGS = 5 V; ID = 25 A; Tj = 25 °C; Fig. 9; resistance
Fig. 10; Fig. 11; Fig. 12
RG gate resistance f = 5 MHz; Tj = 25 °C
Min Typ Max Unit
- -
100...
