PBSS2515VS datasheet, transistor equivalent, nexperia

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datasheet Download (Size : 196.89KB)

Features and benefits

* 300 mW total power dissipation
* Very small 1.6 x 1.2 mm ultra thin package
* Excellent coplanarity due to straight leads
* Low collector-emitter satura.

Application

* General purpose switching and muting
* Low frequency driver circuits
* Audio frequency general purpose amp.

Description

NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits
* 300 mW total power dissipation
* Very small 1.6 x 1.2 mm ultra thin pa.

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