PED2311DN - N-Channel Enhancement Mode Power MOSFET
PED2311DN Features
* VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1