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ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor

ACE2600B Description

ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection .
The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

ACE2600B Features

* VDS(V)=20V
* ID=6A (VGS=4.5V)
* RDS(ON)＜22mΩ (VGS=4.5V)
* RDS(ON)＜26mΩ (VGS=2.5V)
* RDS(ON)＜34mΩ (VGS=1.8V)
* ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous)
* AC TA=25 OC TA

📥 Download Datasheet

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Datasheet Details

Part number
ACE2600B
Manufacturer
ACE Technology
File Size
446.47 KB
Datasheet
ACE2600B-ACETechnology.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

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Dual N-Channel Enhancement Mode Field Effect Transistor ACE Technology
ACE Technology ACE2600B-like datasheet