AWT6272R - Linear Power Amplifier Module
The AWT6272R meets the increasing demands for higher output power in UMTS handsets.
The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset.
The device is manufactured on an advanced InGaP HBT GND at slug (pad) VREF 1 10 GND GND RFOUT GND VCC
AWT6272R Features
* InGaP HBT Technology High Efficiency: 44 % @ POUT = +29 dBm 20 % @ POUT = +16 dBm 15 % @ POUT = +7 dBm
* Low Quiescent Current: 16 mA Low Leakage Current in Shutdown Mode:
