Datasheet Details
- Part number
- MRF136
- Manufacturer
- ASI
- File Size
- 15.82 KB
- Datasheet
- MRF136-ASI.pdf
- Description
- RF POWER FIELD-EFFECT TRANSISTOR
MRF136 Description
MRF136 RF POWER FIELD-EFFECT TRANSISTOR .
The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.
MRF136 Applications
* up to 400 MHz. MAXIMUM RATINGS
ID
2.5 A
VDSS
65 V
PDISS
50 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
3.6 °C/W
PACKAGE STYLE .380 4L FLG
1 = DRAIN 2 = GATE 3 & 4 = SOURCE
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
V(BR)DSS
ID = 5.0 mA
VGS = 0 V
IDSS
V
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