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MRF136 - RF POWER FIELD-EFFECT TRANSISTOR

MRF136 Description

MRF136 RF POWER FIELD-EFFECT TRANSISTOR .
The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.

MRF136 Applications

* up to 400 MHz. MAXIMUM RATINGS ID 2.5 A VDSS 65 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 3.6 °C/W PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3 & 4 = SOURCE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS V(BR)DSS ID = 5.0 mA VGS = 0 V IDSS V

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Datasheet Details

Part number
MRF136
Manufacturer
ASI
File Size
15.82 KB
Datasheet
MRF136-ASI.pdf
Description
RF POWER FIELD-EFFECT TRANSISTOR

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POWER FIELD-EFFECT TRANSISTOR ASI
ASI MRF136-like datasheet