Datasheet4U Logo Datasheet4U.com

MRF136 RF POWER FIELD-EFFECT TRANSISTOR

📥 Download Datasheet  Datasheet Preview Page 1

Description

MRF136 RF POWER FIELD-EFFECT TRANSISTOR .
The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz.

📥 Download Datasheet

Preview of MRF136 PDF

Datasheet Specifications

Part number
MRF136
Manufacturer
ASI
File Size
15.82 KB
Datasheet
MRF136-ASI.pdf
Description
RF POWER FIELD-EFFECT TRANSISTOR

Applications

* up to 400 MHz. MAXIMUM RATINGS ID 2.5 A VDSS 65 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 3.6 °C/W PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3 & 4 = SOURCE CHARACTERISTICS TC = 25 °C SYMBOL TEST CONDITIONS V(BR)DSS ID = 5.0 mA VGS = 0 V IDSS V

MRF136 Distributors

📁 Related Datasheet

📌 All Tags

ASI MRF136-like datasheet