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MRF136 Datasheet - ASI

MRF136 RF POWER FIELD-EFFECT TRANSISTOR

The ASI MRF136 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Amplifier Applications up to 400 MHz. MAXIMUM RATINGS ID 2.5 A VDSS 65 V PDISS 50 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 3.6 °C/W PACKAGE STYLE .380 4L FLG 1 = DRAIN 2 = GATE 3.

MRF136-ASI.pdf

Preview of MRF136 PDF

Datasheet Details

Part number:

MRF136

Manufacturer:

ASI

File Size:

15.82 KB

Description:

Rf power field-effect transistor.

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MRF136 MRF136 POWER FIELD-EFFECT TRANSISTOR ASI

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