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AP9912J, AP9912H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9912J Description

AP9912H/J Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast www.DataSheet4U.com Switching G S D N-CHANNEL ENHANCE.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

AP9912J Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9912J) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AP9912J, AP9912H. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AP9912J, AP9912H
Manufacturer
Advanced Power Electronics
File Size
118.62 KB
Datasheet
AP9912H_AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP9912J, AP9912H.
Please refer to the document for exact specifications by model.

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP9912J-like datasheet