HSCH-5315 - Beam Lead Schottky Diodes
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.
Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.
A nitride passivation layer provides immunity from contaminant
HSCH-5315 Features
* Platinum Tri-Metal System High Temperature Stability
* Silicon Nitride Passivation Stable, Reliable Performance
* Low Noise Figure Guaranteed 7.5 dB at 26 GHz
* High Uniformity Tightly Controlled Process Insures Uniform RF Characteristics
* Rugged Constructi
