AFC1016E, AFC1016E-Alfa Datasheet - Alfa-MOS

AFC1016E - N&P-Channel MOSFET

AFC1016E, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFC1016E Features

* N-Channel

* 20V/0.6A,RDS(ON)= 360mΩ@VGS=4.5V

* 20V/0.5A,RDS(ON)= 420mΩ@VGS=2.5V

* 20V/0.4A,RDS(ON)= 560mΩ@VGS=1.8V P-Channel

* -20V/-0.4A, RDS(ON)= 620 mΩ@ VGS =-4.5V

* -20V/-0.3A, RDS(ON)= 860 mΩ@ VGS =-2.5V

* -20V/-0.2A, RDS(ON)= 1450 mΩ@ VGS =-1.8V Application

* Batte

AFC1016E-Alfa-MOS.pdf