AFC1016E, AFC1016E-Alfa Datasheet - Alfa-MOS

AFC1016E N&P-Channel MOSFET

AFC1016E, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFC1016E Features

* N-Channel

* 20V/0.6A,RDS(ON)= 360mΩ@VGS=4.5V

* 20V/0.5A,RDS(ON)= 420mΩ@VGS=2.5V

* 20V/0.4A,RDS(ON)= 560mΩ@VGS=1.8V P-Channel

* -20V/-0.4A, RDS(ON)= 620 mΩ@ VGS =-4.5V

* -20V/-0.3A, RDS(ON)= 860 mΩ@ VGS =-2.5V

* -20V/-0.2A, RDS(ON)= 1450 mΩ@ VGS =-1.8V Application

* Batte

AFC1016E-Alfa-MOS.pdf

AFC1016E Datasheet Preview — This datasheet PDF includes multiple part numbers: AFC1016E, AFC1016E-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFC1016E, AFC1016E-Alfa

Manufacturer:

Alfa-MOS

File Size:

691.74 KB

Description:

N&p-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFC1016E, AFC1016E-Alfa.
Please refer to the document for exact specifications by model.

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AFC1016E AFC1016E-Alfa N &P-Channel MOSFET Alfa-MOS

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