AFC2517W - N & P-Channel Enhancement Mode MOSFET
AFC2517W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
AFC2517W 20
AFC2517W Features
* z N-Channel 20V/4.6A,RDS(ON)=25mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=38mΩ@VGS=1.8V z P-Channel -20V/-3.6A,RDS(ON)=52mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=65mΩ@VGS=2.5V -20V/-1.2A,RDS(ON)=82mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resista