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AFC2517W, AFC2517W-Alfa Datasheet - Alfa-MOS

AFC2517W N & P-Channel Enhancement Mode MOSFET

AFC2517W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. AFC2517W 20.

AFC2517W Features

* z N-Channel 20V/4.6A,RDS(ON)=25mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/3.8A,RDS(ON)=38mΩ@VGS=1.8V z P-Channel -20V/-3.6A,RDS(ON)=52mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=65mΩ@VGS=2.5V -20V/-1.2A,RDS(ON)=82mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resista

AFC2517W-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFC2517W, AFC2517W-Alfa. Please refer to the document for exact specifications by model.
AFC2517W Datasheet Preview Page 2 AFC2517W Datasheet Preview Page 3

Datasheet Details

Part number:

AFC2517W, AFC2517W-Alfa

Manufacturer:

Alfa-MOS

File Size:

785.95 KB

Description:

N & p-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFC2517W, AFC2517W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFC2517W AFC2517W-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS

AFC2517W Distributor