AFC2527W - N & P-Channel Enhancement Mode MOSFET
AFC2527W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
AFC2527W 20
AFC2527W Features
* z N-Channel 20V/5.0A,RDS(ON)=19mΩ@VGS=4.5V 20V/4.6A,RDS(ON)=23mΩ@VGS=2.5V 20V/4.2A,RDS(ON)=34mΩ@VGS=1.8V z P-Channel -20V/-4.5A,RDS(ON)=42mΩ@VGS=4.5V -20V/-3.4A,RDS(ON)=52mΩ@VGS=2.5V -20V/-2.4A,RDS(ON)=68mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resista
