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AFC2519W, AFC2519W-Alfa Datasheet - Alfa-MOS

AFC2519W N & P-Channel Enhancement Mode MOSFET

AFC2519W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. AFC2519W 20.

AFC2519W Features

* z N-Channel 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z P-Channel -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-re

AFC2519W-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFC2519W, AFC2519W-Alfa. Please refer to the document for exact specifications by model.
AFC2519W Datasheet Preview Page 2 AFC2519W Datasheet Preview Page 3

Datasheet Details

Part number:

AFC2519W, AFC2519W-Alfa

Manufacturer:

Alfa-MOS

File Size:

796.50 KB

Description:

N & p-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFC2519W, AFC2519W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFC2519W AFC2519W-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS

AFC2519W Distributor