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AFC2519W, AFC2519W-Alfa - N & P-Channel Enhancement Mode MOSFET

AFC2519W Description

Alfa-MOS Technology General .
AFC2519W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

AFC2519W Features

* z N-Channel 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z P-Channel -20V/-4.5A,RDS(ON)=80mΩ@VGS=-4.5V -20V/-3.8A,RDS(ON)=105mΩ@VGS=-2.5V -20V/-2.5A,RDS(ON)=145mΩ@VGS=-1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-re

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This datasheet PDF includes multiple part numbers: AFC2519W, AFC2519W-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFC2519W, AFC2519W-Alfa
Manufacturer
Alfa-MOS
File Size
796.50 KB
Datasheet
AFC2519W-Alfa-MOS.pdf
Description
N & P-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFC2519W, AFC2519W-Alfa.
Please refer to the document for exact specifications by model.

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