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AFN10A60D, AFN10A60D-Alfa Datasheet - Alfa-MOS

AFN10A60D N-Channel Enhancement Mode MOSFET

AFN10A60D is an N-channel enhancement mode Power MOSFET which is produced using VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy puls.

AFN10A60D Features

* 600V/5A,RDS(ON)=0.58Ω(typ.)@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability Application AC-DC Switching Power Supply LCD / LED / PDP TV Lighting Solar Inverter TO-220F-3L Absolute Maximum Ratings (Tc=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Gat

AFN10A60D-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN10A60D, AFN10A60D-Alfa. Please refer to the document for exact specifications by model.
AFN10A60D Datasheet Preview Page 2 AFN10A60D Datasheet Preview Page 3

Datasheet Details

Part number:

AFN10A60D, AFN10A60D-Alfa

Manufacturer:

Alfa-MOS

File Size:

498.43 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN10A60D, AFN10A60D-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN10A60D AFN10A60D-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN10A60D Distributor