AFN2912W

N-Channel Enhancement Mode MOSFET

Alfa-MOS

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Datasheet Details

Part number:

AFN2912W

Manufacturer:

Alfa-MOS

File Size:

413.94 KB

Description:

N-channel enhancement mode mosfet.
Alfa-MOS Technology General Description AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced T.
AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RD.

✔ AFN2912W Features

z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L

✔ AFN2912W Application

Pin Description ( DFN2X2-6L ) AFN2912W 20V N-Channel Enhancement Mode MOSFET Features z 20V/4.5A,RDS(ON)=3

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AFN2912W N-Channel Enhancement Mode MOSFET Alfa-MOS

Datasheet Details

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Description:

✔ AFN2912W Features

✔ AFN2912W Application

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