AFN2912W Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN2912W Features

* z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design Application z Power Management in Note book z LED Display z DC-DC System z LCD Panel Pin Define Pin 1 2 3 4 5 6

AFN2912W General Description

AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN2912W Datasheet (413.94 KB)

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AFN2912W

Manufacturer:

Alfa-MOS

File Size:

413.94 KB

Description:

N-channel enhancement mode mosfet.

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AFN2912W N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN2912W Features

AFN2912W General Description

Datasheet Details

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