AFN2912W, AFN2912W-Alfa - N-Channel Enhancement Mode MOSFET

Alfa-MOS

The AFN2912W by Alfa-MOS is a N-Channel Enhancement Mode MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	AFN2912W, AFN2912W-Alfa
Manufacturer	Alfa-MOS
File Size	413.94 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	AFN2912W-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFN2912W, AFN2912W-Alfa. Please refer to the document for exact specifications by model.
Additional preview pages of the AFN2912W datasheet.

AFN2912W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

z 20V/4.5A,RDS(ON)=38mΩ@VGS=4.5V z 20V/3.6A,RDS(ON)=48mΩ@VGS=2.5V z 20V/2.4A,RDS(ON)=68mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z DFN2X2-6L package design.

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Published: Nov 22, 2018 |