AFN2920W Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN2920W Features

* z 20V/5.0A,RDS(ON)=19mΩ@VGS=4.5V z 20V/4.6A,RDS(ON)=23mΩ@VGS=2.5V z 20V/4.2A,RDS(ON)=34mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD protection z DFN2X2-6L package design Application z Load Switch with Low

AFN2920W General Description

AFN2920W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN2920W Datasheet (434.25 KB)

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Datasheet Details

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AFN2920W

Manufacturer:

Alfa-MOS

File Size:

434.25 KB

Description:

N-channel enhancement mode mosfet.

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AFN2920W N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN2920W Features

AFN2920W General Description

Datasheet Details

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