AFN2922W Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN2922W Features

* z 20V/4.6A,RDS(ON)=25mΩ@VGS=4.5V z 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V z 20V/3.8A,RDS(ON)=38mΩ@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design Application z Load Switch with Low Voltage Drop z L

AFN2922W General Description

AFN2922W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN2922W Datasheet (430.97 KB)

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AFN2922W

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Alfa-MOS

File Size:

430.97 KB

Description:

N-channel enhancement mode mosfet.

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AFN2922W N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN2922W Features

AFN2922W General Description

Datasheet Details

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