AFN2918W, AFN2918W-Alfa Datasheet - Alfa-MOS

AFN2918W N-Channel Enhancement Mode MOSFET

AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN2918W Features

* 30V/4.0A,RDS(ON)=50mΩ@VGS=10V

* 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V

* 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V

* 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN2X2-6L package

AFN2918W-Alfa-MOS.pdf

AFN2918W Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN2918W, AFN2918W-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN2918W, AFN2918W-Alfa

Manufacturer:

Alfa-MOS

File Size:

583.33 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN2918W, AFN2918W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN2918W AFN2918W-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

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