AFN2918W Datasheet - Alfa-MOS

N-Channel Enhancement Mode MOSFET

AFN2918W Features

* 30V/4.0A,RDS(ON)=50mΩ@VGS=10V

* 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V

* 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V

* 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN2X2-6L package

AFN2918W General Description

AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN2918W Datasheet (583.33 KB)

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AFN2918W

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Alfa-MOS

File Size:

583.33 KB

Description:

N-channel enhancement mode mosfet.

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AFN2918W N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN2918W Features

AFN2918W General Description

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