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AFN2918W, AFN2918W-Alfa N-Channel Enhancement Mode MOSFET

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Description

Alfa-MOS Technology AFN2918W 30V N-Channel Enhancement Mode MOSFET General .
AFN2918W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN2918W, AFN2918W-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN2918W, AFN2918W-Alfa
Manufacturer
Alfa-MOS
File Size
583.33 KB
Datasheet
AFN2918W-Alfa-MOS.pdf
Description
N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN2918W, AFN2918W-Alfa.
Please refer to the document for exact specifications by model.

Features

* 30V/4.0A,RDS(ON)=50mΩ@VGS=10V
* 30V/3.0A,RDS(ON)=56mΩ@VGS=4.5V
* 30V/2.5A,RDS(ON)=64mΩ@VGS=2.5V
* 30V/1.0A,RDS(ON)=76mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* DFN2X2-6L package

AFN2918W Distributors

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