AFN3302W - N-Channel MOSFET
AFN3302W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFN3302W Features
* 20V/14A,RDS(ON)=14mΩ@VGS=4.5V
* 20V/12A,RDS(ON)=18mΩ@VGS=2.5V
* 20V/10A,RDS(ON)=26mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* DFN3X3-8L package design Application
* DC-DC Conver
