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AFN3302W

N-Channel MOSFET

AFN3302W Features

* 20V/14A,RDS(ON)=14mΩ@VGS=4.5V

* 20V/12A,RDS(ON)=18mΩ@VGS=2.5V

* 20V/10A,RDS(ON)=26mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3X3-8L package design Application

* DC-DC Conver

AFN3302W General Description

AFN3302W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN3302W Datasheet (365.18 KB)

Preview of AFN3302W PDF

Datasheet Details

Part number:

AFN3302W

Manufacturer:

Alfa-MOS

File Size:

365.18 KB

Description:

N-channel mosfet.

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TAGS

AFN3302W N-Channel MOSFET Alfa-MOS

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