AFN3302W Datasheet, Mosfet, Alfa-MOS

AFN3302W Features

  • Mosfet
  • 20V/14A,RDS(ON)=14mΩ@VGS=4.5V
  • 20V/12A,RDS(ON)=18mΩ@VGS=2.5V
  • 20V/10A,RDS(ON)=26mΩ@VGS=1.8V
  • Super high density cell design for extremely low RDS (O

PDF File Details

Part number:

AFN3302W

Manufacturer:

Alfa-MOS

File Size:

365.18kb

Download:

📄 Datasheet

Description:

N-channel mosfet. AFN3302W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

Datasheet Preview: AFN3302W 📥 Download PDF (365.18kb)
Page 2 of AFN3302W Page 3 of AFN3302W

AFN3302W Application

  • Applications Pin Description ( DFN3X3-8L ) AFN3302W 20V N-Channel Enhancement Mode MOSFET Features
  • 20V/14A,RDS(ON)=14mΩ@VGS=4.5V

TAGS

AFN3302W
N-Channel
MOSFET
Alfa-MOS

📁 Related Datasheet

AFN3306WS - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.

AFN3309WS - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.

AFN3310W - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3316W - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3316W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3334WS - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3334WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.

AFN3006S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3009S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3009S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3015S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3015S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3016S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3016S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3019S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts