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AFN3302W, AFN3302W-Alfa N-Channel MOSFET

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Description

Alfa-MOS Technology General .
AFN3302W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN3302W, AFN3302W-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN3302W, AFN3302W-Alfa
Manufacturer
Alfa-MOS
File Size
365.18 KB
Datasheet
AFN3302W-Alfa-MOS.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN3302W, AFN3302W-Alfa.
Please refer to the document for exact specifications by model.

Features

* 20V/14A,RDS(ON)=14mΩ@VGS=4.5V
* 20V/12A,RDS(ON)=18mΩ@VGS=2.5V
* 20V/10A,RDS(ON)=26mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

AFN3302W Distributors

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