AFN3302W, AFN3302W-Alfa Datasheet - Alfa-MOS

AFN3302W N-Channel MOSFET

AFN3302W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN3302W Features

* 20V/14A,RDS(ON)=14mΩ@VGS=4.5V

* 20V/12A,RDS(ON)=18mΩ@VGS=2.5V

* 20V/10A,RDS(ON)=26mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3X3-8L package design Application

* DC-DC Conver

AFN3302W-Alfa-MOS.pdf

AFN3302W Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN3302W, AFN3302W-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN3302W, AFN3302W-Alfa

Manufacturer:

Alfa-MOS

File Size:

365.18 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3302W, AFN3302W-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN3302W AFN3302W-Alfa N-Channel MOSFET Alfa-MOS

AFN3302W Distributor