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AFN3309WS Datasheet - Alfa-MOS

N-Channel MOSFET

AFN3309WS Features

* 30V/20A,RDS(ON)=4.5mΩ@VGS=10V

* 30V/15A,RDS(ON)=6.8mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3X3-8L package design Application

* DC-DC Converter

* POL Pin Define Pin 1 2

AFN3309WS General Description

AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN3309WS Datasheet (326.40 KB)

Preview of AFN3309WS PDF

Datasheet Details

Part number:

AFN3309WS

Manufacturer:

Alfa-MOS

File Size:

326.40 KB

Description:

N-channel mosfet.

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AFN3309WS N-Channel MOSFET Alfa-MOS

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