AFN3310W - N-Channel MOSFET
AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descripti
AFN3310W Features
* 30V/16A,RDS(ON)=17mΩ@VGS=10V
* 30V/10A,RDS(ON)=19mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* DFN3X3-8L package design Application
* DC/DC Converter
* Load Switch
* Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Sym
