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AFN3310W

N-Channel MOSFET

AFN3310W Features

* 30V/16A,RDS(ON)=17mΩ@VGS=10V

* 30V/10A,RDS(ON)=19mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* DFN3X3-8L package design Application

* DC/DC Converter

* Load Switch

* Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Sym

AFN3310W General Description

AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN3310W Datasheet (329.67 KB)

Preview of AFN3310W PDF

Datasheet Details

Part number:

AFN3310W

Manufacturer:

Alfa-MOS

File Size:

329.67 KB

Description:

N-channel mosfet.

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TAGS

AFN3310W N-Channel MOSFET Alfa-MOS

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