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AFN3310W, AFN3310W-Alfa Datasheet - Alfa-MOS

AFN3310W - N-Channel MOSFET

AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Descripti

AFN3310W Features

* 30V/16A,RDS(ON)=17mΩ@VGS=10V

* 30V/10A,RDS(ON)=19mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* DFN3X3-8L package design Application

* DC/DC Converter

* Load Switch

* Power Management in Notebook Computer Pin Define Pin 1 2 3 4 5 6 7 8 Sym

AFN3310W-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN3310W, AFN3310W-Alfa. Please refer to the document for exact specifications by model.
AFN3310W Datasheet Preview Page 2 AFN3310W Datasheet Preview Page 3

Datasheet Details

Part number:

AFN3310W, AFN3310W-Alfa

Manufacturer:

Alfa-MOS

File Size:

329.67 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN3310W, AFN3310W-Alfa.
Please refer to the document for exact specifications by model.

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