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AFN3306WS

N-Channel MOSFET

AFN3306WS Features

* 30V/20A,RDS(ON)=4.0mΩ@VGS=10V

* 30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3X3-8L package design Application

* DC-DC Converter

* POL Pin Define Pin 1 2

AFN3306WS General Description

AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN3306WS Datasheet (470.95 KB)

Preview of AFN3306WS PDF

Datasheet Details

Part number:

AFN3306WS

Manufacturer:

Alfa-MOS

File Size:

470.95 KB

Description:

N-channel mosfet.

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TAGS

AFN3306WS N-Channel MOSFET Alfa-MOS

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