AFN3306WS Datasheet, Mosfet, Alfa-MOS

AFN3306WS Features

• Mosfet
• 30V/20A,RDS(ON)=4.0mΩ@VGS=10V
• 30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V
• Super high density cell design for extremely low RDS (ON)
• Exceptional on-resistance

PDF File Details

Part number:

AFN3306WS

Manufacturer:

Alfa-MOS

File Size:

470.95kb

Download:

📄 Datasheet

Description:

N-channel mosfet. AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These de

AFN3306WS Application

• Applications Pin Description ( DFN3X3-8L ) AFN3306WS 30V N-Channel Enhancement Mode MOSFET Features
• 30V/20A,RDS(ON)=4.0mΩ@VGS=10V
<

TAGS

AFN3306WS

Alfa-MOS

📁 Related Datasheet

AFN3302W - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3302W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3309WS - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3309WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.

AFN3310W - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3310W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3316W - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3316W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3334WS - N-Channel MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3334WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), lo.

AFN3006S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3006S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3009S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3009S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3015S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3015S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3016S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3016S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.

AFN3019S - N-Channel Enhancement Mode MOSFET (Alfa-MOS)
Alfa-MOS Technology General Description AFN3019S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low.