AFN3306WS - N-Channel MOSFET
AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los
AFN3306WS Features
* 30V/20A,RDS(ON)=4.0mΩ@VGS=10V
* 30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* DFN3X3-8L package design Application
* DC-DC Converter
* POL Pin Define Pin 1 2
