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AFN3306WS, AFN3306WS-Alfa N-Channel MOSFET

AFN3306WS Description

Alfa-MOS Technology General .
AFN3306WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

AFN3306WS Features

* 30V/20A,RDS(ON)=4.0mΩ@VGS=10V
* 30V/15A,RDS(ON)=5.8mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AFN3306WS, AFN3306WS-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFN3306WS, AFN3306WS-Alfa
Manufacturer
Alfa-MOS
File Size
470.95 KB
Datasheet
AFN3306WS-Alfa-MOS.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN3306WS, AFN3306WS-Alfa.
Please refer to the document for exact specifications by model.

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