AFN3424A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFN3424A Features
* 30V/2.4A,RDS(ON)=85mΩ@VGS=10V 30V/2.0A,RDS(ON)=95mΩ@VGS=4.5V 30V/1.5A,RDS(ON)=265mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Portable Equipment Battery Powered System Net Working
Datasheet Details
AFN3424A, AFN3424A-Alfa
Alfa-MOS
603.71 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: AFN3424A, AFN3424A-Alfa.
Please refer to the document for exact specifications by model.
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