AFN4608S, AFN4608S-Alfa Datasheet - Alfa-MOS

AFN4608S 60V N-Channel Enhancement Mode MOSFET

AFN4608S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descripti.

AFN4608S Features

* ID= 9A,RDS(ON)= 12mΩ@VGS=10V

* ID= 7A,RDS(ON)= 15mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* DFN5X6-8L package design Application

* Networking / Telecom / Server

* LED Lighting Applications

* Quick Charger Applications

* DC-DC Primary

AFN4608S-Alfa-MOS.pdf

AFN4608S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN4608S, AFN4608S-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN4608S, AFN4608S-Alfa

Manufacturer:

Alfa-MOS

File Size:

693.95 KB

Description:

60v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN4608S, AFN4608S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN4608S AFN4608S-Alfa 60V N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN4608S Distributor