AFN7002AS Datasheet - Alfa-MOS

AFN7002AS N-Channel MOSFET

AFN7002AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN7002AS Features

* 60V/0.5A , RDS(ON)=3000mΩ@VGS=10V 60V/0.3A , R DS(ON)=4000mΩ@VGS=5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protection ( 1KV ) Diode design

* in SOT-23 package design Application Drivers: Relays, Solenoids, Lamp

AFN7002AS Datasheet (396.77 KB)