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AFN7002LDS

N-Channel MOSFET

AFN7002LDS Features

* z 60V/0.5A , R DS(ON)=2.4Ω@VGS=10V z 60V/0.4A , R DS(ON)=3.0Ω@VGS=4.5V z 60V/0.3A , R DS(ON)=6.5Ω@VGS=2.5V z 60V/0.2A , R DS(ON)=9.0Ω@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD Protection Diode design

AFN7002LDS General Description

AFN7002LDS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industr.

AFN7002LDS Datasheet (382.61 KB)

Preview of AFN7002LDS PDF

Datasheet Details

Part number:

AFN7002LDS

Manufacturer:

Alfa-MOS

File Size:

382.61 KB

Description:

N-channel mosfet.

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AFN7002LDS N-Channel MOSFET Alfa-MOS

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