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AFN7002LDS, AFN7002LDS-Alfa Datasheet - Alfa-MOS

AFN7002LDS N-Channel MOSFET

AFN7002LDS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industr.

AFN7002LDS Features

* z 60V/0.5A , R DS(ON)=2.4Ω@VGS=10V z 60V/0.4A , R DS(ON)=3.0Ω@VGS=4.5V z 60V/0.3A , R DS(ON)=6.5Ω@VGS=2.5V z 60V/0.2A , R DS(ON)=9.0Ω@VGS=1.8V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD Protection Diode design

AFN7002LDS-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN7002LDS, AFN7002LDS-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

AFN7002LDS, AFN7002LDS-Alfa

Manufacturer:

Alfa-MOS

File Size:

382.61 KB

Description:

N-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN7002LDS, AFN7002LDS-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN7002LDS AFN7002LDS-Alfa N-Channel MOSFET Alfa-MOS

AFN7002LDS Distributor