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AFN7110S

40V N-Channel Enhancement Mode MOSFET

AFN7110S Features

* ID=20A,RDS(ON)=4.5mΩ@VGS=10V

* ID=15A,RDS(ON)=5.4mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3X3-8L package design Application

* DC-DC Converter

* POL Pin Define Pin 1~3 4 5

AFN7110S General Description

AFN7110S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN7110S Datasheet (710.19 KB)

Preview of AFN7110S PDF

Datasheet Details

Part number:

AFN7110S

Manufacturer:

Alfa-MOS

File Size:

710.19 KB

Description:

40v n-channel enhancement mode mosfet.

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TAGS

AFN7110S 40V N-Channel Enhancement Mode MOSFET Alfa-MOS

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