AFN7898S, AFN7898S-Alfa 200V N-Channel Enhancement Mode MOSFET

Alfa-MOS

Description

Alfa-MOS Technology General .
AFN7898S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

📥 Download Datasheet

AFN7898S Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN7898S, AFN7898S-Alfa. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: AFN7898S, AFN7898S-Alfa
Manufacturer: Alfa-MOS
File Size: 671.26 KB
Datasheet: AFN7898S-Alfa-MOS.pdf
Description: 200V N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: AFN7898S, AFN7898S-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=7A,RDS(ON)=105mΩ@VGS=10V
* ID=7A,RDS(ON)=115mΩ@VGS=7.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

AFN7898S Distributors

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📌 All Tags

AFN7898S-Alfa 200V N-Channel Enhancement Mode MOSFET Alfa-MOS

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