AFN7898S

200V N-Channel Enhancement Mode MOSFET

Alfa-MOS

AFN7898S Features

* ID=7A,RDS(ON)=105mΩ@VGS=10V

* ID=7A,RDS(ON)=115mΩ@VGS=7.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3X3-8L package design Application

* Primary Side Switch

* Synchronous Rectification

AFN7898S General Description

AFN7898S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN7898S Datasheet (671.26 KB)

AFN7898S Datasheet Preview — Preview of AFN7898S PDF

Datasheet Details

Part number:

AFN7898S

Manufacturer:

Alfa-MOS

File Size:

671.26 KB

Description:

200v n-channel enhancement mode mosfet.

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AFN7898S 200V N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN7898S Features

AFN7898S General Description

Datasheet Details

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Description:

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