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AFP2379, AFP2379-Alfa Datasheet - Alfa-MOS

AFP2379 P-Channel Enhancement Mode MOSFET

AFP2379, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFP2379 Features

* -60V/-3.6A,RDS(ON)=135mΩ@VGS=-10V -60V/-2.6A,RDS(ON)=150mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application Power Management in Note book LED Display DC-DC System LCD Panel Pin Defin

AFP2379-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP2379, AFP2379-Alfa. Please refer to the document for exact specifications by model.
AFP2379 Datasheet Preview Page 2 AFP2379 Datasheet Preview Page 3

Datasheet Details

Part number:

AFP2379, AFP2379-Alfa

Manufacturer:

Alfa-MOS

File Size:

567.33 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP2379, AFP2379-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP2379 AFP2379-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS

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