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AS4C4M4F0 - 5V 4M x 4 CMOS DRAM

AS4C4M4F0 Description

® 5V 4M×4 CMOS DRAM (Fast Page mode) AS4C4M4F0 AS4C4M4F1 .
A0 to A11 Address inputs RAS Row address strobe CAS Column address strobe WE Write enable I/O0 to I/O3 Input/output OE Output enable VCC GND.

AS4C4M4F0 Features

* Organization: 4,194,304 words × 4 bits
* High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
* Low power consumption - Active: 908 mW max - Standby: 5.5 mW max, CMOS I/O
* Fast page mode
* Refresh - 4096 ref

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CMOS DRAM Alliance Semiconductor
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