Datasheet4U Logo Datasheet4U.com

AO4438 - 60V N-Channel MOSFET

Description

The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

📥 Download Datasheet

Datasheet preview – AO4438

Datasheet Details

Part number AO4438
Manufacturer Alpha & Omega Semiconductors
File Size 245.54 KB
Description 60V N-Channel MOSFET
Datasheet download datasheet AO4438 Datasheet
Additional preview pages of the AO4438 datasheet.

📁 Similar Datasheet

  • AO4430 - N-Channel MOSFET (VBsemi)
  • AO4433 - P-Channel MOSFET (VBsemi)
  • AO4435 - P-Channel MOSFET (VBsemi)
  • AO4401 - P-Channel MOSFET (Freescale)
  • AO4402 - N-Channel MOSFET (Freescale)
  • AO4403 - P-Channel MOSFET (Freescale)
  • AO4403-HF - P-Channel MOSFET (Kexin)
  • AO4404 - N-Channel MOSFET (Freescale)
  • AO4404B - N-Channel MOSFET (Freescale)
  • AO4405 - P-Channel MOSFET (Alpha Industries)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AO4438 60V N-Channel MOSFET General Description The AO4438 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 60V ID = 8.2A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 8.2 6.6 40 3.
Published: |