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AO8830 Dual N-Channel MOSFET

AO8830 Description

www.DataSheet4U.com AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

AO8830 Features

* VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 41mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ G2 1.6KΩ D2 S1 S2 Absolute Maximum Ratings TA=25°C u

AO8830 Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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Datasheet Details

Part number
AO8830
Manufacturer
Alpha & Omega Semiconductors
File Size
142.74 KB
Datasheet
AO8830_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel MOSFET

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Dual N-Channel MOSFET Alpha & Omega Semiconductors
Alpha & Omega Semiconductors AO8830-like datasheet