AO8830 Dual N-Channel MOSFET

Alpha & Omega Semiconductors

Description

www.DataSheet4U.com AO8830 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO8830 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO8830
Manufacturer: Alpha & Omega Semiconductors
File Size: 142.74 KB
Datasheet: AO8830_AlphaOmegaSemiconductors.pdf
Description: Dual N-Channel MOSFET

Features

* VDS (V) = 20V ID = 6 A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 41mΩ (VGS = 2.5V) RDS(ON) < 55mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1 TSSOP-8 Top View D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 1.6KΩ G2 1.6KΩ D2 S1 S2 Absolute Maximum Ratings TA=25°C u

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor,

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AO8830 Dual N-Channel MOSFET Alpha & Omega Semiconductors

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