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BF9100BSNL N-Channel MOSFET

BF9100BSNL Description

BYD Microelectronics Co., Ltd.BF9100BSNL 100V N-Channel MOSFET General .
This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge.

BF9100BSNL Features

* z VDS =100 V z ID =100A z Typical RDS(ON) =8m Ω (VGS=10V,ID=50A) z Fast switching z 100% avalanche tested z Improved dv/dt capability Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage EAS

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Datasheet Details

Part number
BF9100BSNL
Manufacturer
BYD
File Size
235.54 KB
Datasheet
BF9100BSNL-BYD.pdf
Description
N-Channel MOSFET

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