BF912N60 N-Channel MOSFET

BYD

Description

BYD Microelectronics Co., Ltd.BF912N60/ BF912N60L 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

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Datasheet Specifications

Part number: BF912N60
Manufacturer: BYD
File Size: 255.92 KB
Datasheet: BF912N60-BYD.pdf
Description: N-Channel MOSFET

Features

* z VDS =600 V z ID =12A z RDS(ON) =0.5 Ω TYP(VGS=10V,ID=6.0A) z Low CRSS (typical 17pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS Single PulseAvalanch

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BF912N60 N-Channel MOSFET BYD

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